Semiconductor device and manufacturing method of the same

ABSTRACT

A method of making a semiconductor device having an ESD protection element which can achieve compatibility between high drain-to-backgate withstand voltage and ESD protection of DMOSFET gates.

RELATED APPLICATION DATA

This application is a continuation of U.S. patent application Ser. No.13/330,082, which is a division of U.S. patent application Ser. No.12/545,950, filed Aug. 24, 2009, now issued as U.S. Pat. No. 8,097,914,the entirety of which is incorporated herein by reference to the extentpermitted by law. The present application claims the benefit of priorityto Japanese Patent Application No. JP 2008-222810 filed in the JapanPatent Office on Aug. 29, 2008, the entirety of which is incorporated byreference herein to the extent permitted by law.

BACKGROUND OF THE INVENTION

The present invention relates to a semiconductor device having a superjunction structure and electrostatic discharge protection element, and amanufacturing method of the same.

A vertical DMOSFET (Double-diffused Metal Oxide Semiconductor FieldEffect Transistor) is commonly known as a high withstand voltage powerdevice for use in high withstand voltage power electronics applications.The vertical DMOSFET provides high withstand voltage thanks to thevertical thickness (depth) of a first conductivity type drift region andthe impurity concentration.

For example, a so-called super junction structure is available as avertical DMOSFET device structure which achieves compatibility betweenelement withstand voltage and low Ron. In this structure, two types ofregions, i.e., a first conductivity type drift region and secondconductivity type pillar region, are alternately repeated (refer, forexample, to Japanese Patent Laid-Open Nos. 2007-335844, 2008-4643,2008-16518 and 2008-16562).

FIG. 7 illustrates a sectional structural diagram of a vertical DMOSFEThaving a super junction structure as an example of a semiconductordevice of the past. In FIG. 7, a main body transistor (Tr) region 50 andESD (Electrostatic Discharge) protection element region 60 in a verticalDMOSFET are shown both of which have a super junction structure.

A drift region 52 which includes a first conductivity type (n type)semiconductor region is formed on the main surface of a drain region 51.The drain region 51 includes a first conductivity type semiconductorregion having a high impurity concentration (n⁺ type).

Second conductivity type (p type) pillar regions 53 are formed in thedrift region 52. The same regions 53 are arranged periodically in thedirection approximately parallel to the main surface of the drain region51. The drift region 52 and pillar regions 53 form a so-called superjunction structure. That is, the drift region 52 and pillar regions 53are adjacent to each other to form p-n junctions.

Body regions 54 are formed on and in contact with the pillar regions 53.The body regions 54 each include a second conductivity type (p type)semiconductor region. As with the pillar regions 53, the body regions 54are adjacent to the first conductivity type drift region to form p-njunctions.

Further, a gate insulating film 58 is provided on the drift region 52and body regions 54.

In the main body Tr region 50, gate electrodes 57 are formed on the gateinsulating film 58 in such a manner as to straddle a part of the bodyregions 54 and a part of the drift region 52.

Further, on the surfaces of the body regions 54, source regions 55 areselectively formed where the end portions of the gate electrodes 57 andthose of the source regions 55 overlap each other. The source regions 55each include a first conductivity type semiconductor region. Stillfurther, on the surfaces of the body regions 54, potential extractionregions (backgates) 56 adapted to extract the potentials of the bodyregions 54 are formed, each adjacent to the source region 55. Thepotential extraction regions 56 each include a second conductivity typesemiconductor region.

In the ESD protection element region 60, source regions 61 areselectively formed on the surfaces of the body regions 54. The sourceregions 61 each include a first conductivity type semiconductor region.Further, on the surfaces of the body regions 54, potential extractionregions (backgates) 62 adapted to extract the potentials of the bodyregions 54 are formed, each with a given spacing from the source region61. The potential extraction regions 62 each include a secondconductivity type semiconductor region.

An input terminal 63 is provided to ensure that the gate electrodes 57of the main body Tr region 50 and the source regions 61 of the ESDprotection element region 60 are at the same potential.

When a voltage is applied from the input terminal 63 to the gateelectrodes 57, channel regions are formed in the body regions 54immediately under the gate electrodes 57 between the source regions 55and drift region 52. This causes electrons to move from the sourceregions 55 to the drift region 52. A current flow through the substrateas electrons move to the drift region 52 and then to the drain region51.

In the vertical DMOSFET configuration shown in FIG. 7, the secondconductivity type pillar regions 53 and first conductivity type driftregion 52 have the same impurity concentration. This causes the pillarregions 53 and drift region 52 to be completely depleted when a reversebias is applied between the drain and source with the transistor turnedoff, thus providing a uniform electric field distribution.

The semiconductor configuration shown in FIG. 7, therefore, provideshigh withstand voltage even if the impurity concentration of the driftregion 52 is increased greater than when a super junction structure isnot used. Further, because the impurity concentration of the driftregion can be increased, a resistance Ron with the transistor turned oncan be reduced. Thus, the semiconductor device configured as describedabove achieves compatibility between high element withstand voltage andlow Ron.

SUMMARY OF THE INVENTION

The above vertical DMOSFET having a super junction structure offers ahigh drain-to-backgate withstand voltage in consideration of thecompatibility between element withstand voltage and Ron as describedabove. However, the gate insulating film is relatively thin. As aresult, the gate insulation withstand voltage is low. Also in commonvertical power DMOSFETs and DMOSFETs including horizontal DMOSFETs, thedrain-to-backgate withstand voltage is high. However, the gateinsulating film is relatively thin. Therefore, the gate insulationwithstand voltage is low.

In the semiconductor device configured as shown in FIG. 7, the withstandvoltage of the drain-to-backgate junction in the ESD protection elementregion must be equal to or greater than that of the main body Tr regionso that the withstand voltage of the DMOSFET in the main body Tr regionis not determined by that of the ESD protection element region.

However, the gate insulation withstand voltage of DMOSFETs is lower thanthe withstand voltage of the drain-to-backgate junction as describedabove. Therefore, if an ESD protection element region is formed whichhas a withstand voltage equal to or greater than that of thedrain-to-backgate junction of the DMOSFET in the main body Tr region,gate protection may not be achieved as intended.

In light of the foregoing, it is an embodiment of the present inventionto provide a semiconductor device having an ESD protection element whichcan achieve compatibility between high drain-to-backgate withstandvoltage and ESD protection of DMOSFET gates.

A semiconductor device according to an embodiment of the presentinvention includes a main body transistor region and ESD protectionelement region. The main body transistor region includes drain, driftand body regions. The drain region includes a first conductivity typesemiconductor layer. The drift region includes a first conductivity typesemiconductor region formed on the drain region. The body regions eachinclude a second conductivity type semiconductor region formed in thedrift region. The semiconductor device further includes a gateinsulating film and gate electrodes. The gate insulating film is formedon the surfaces of the drift and body regions. The gate electrodes areformed on the surface of the gate insulating film in such a manner as tostraddle a part of the surfaces of the body and drift regions. The bodyregions of the main body transistor region each include a source regionand body potential extraction region. The source regions each include asecond conductivity type semiconductor region formed on a part of thesurface of the body region. The body potential extraction regions eachinclude a first conductivity type impurity diffusion layer. In the mainbody transistor, channel regions are each formed on a part of thesurface of the body region in which the source region is formed andwhich is covered by the end portion of the gate electrode and the gateelectrode. The gate length in the ESD protection element region is equalto or less than twice the channel region length in the main bodytransistor region.

A semiconductor device manufacturing method according to an embodimentof the present invention forms a drift region by epitaxially growing afirst conductivity type semiconductor layer on the main surface of afirst conductivity type semiconductor base body. Next, a gate insulatingfilm is formed on the drift layer surface, followed by the formation ofgate electrodes on the gate insulating film. Next, a second conductivitytype impurity is ion-injected using the formed gate electrodes as masksand thermally diffused to form second conductivity type body regions.Further, a first conductivity type impurity is ion-injected into theformed body regions using the gate electrodes as masks to form sourceregions in the main body transistor. Still further, source regions anddrain regions are formed in the ESD protection element, and a secondconductivity type impurity is ion-injected into the body regions to formbody potential extraction regions. Finally, in the process step forforming second conductivity type body regions, gate electrodes of theESD protection element are formed so that the gate length thereof isequal to or less than twice the diffusion length of the ion-injectedimpurity in the direction of the gate electrodes of the main bodytransistor.

In the semiconductor device according to an embodiment of the presentinvention, the gate electrodes of the ESD protection element are formedso that the gate length is equal to or less than the channel length ofthe main body transistor, allowing for the formation of gate electrodesand body regions having the same configuration as in the main bodytransistor. This provides a junction withstand voltage of the ESDprotection element region equal to or greater than that of the main bodytransistor. Further, the gate length in the ESD protection elementregion is equal to or less than twice the channel region length in themain body transistor region, permitting the formation of a GGMOSelectrostatic discharge protection element through lateral diffusion ofthe body region. This provides static discharge protection at a voltageequal to or lower than the gate insulation withstand voltage only whenstatic electricity is applied to the gate.

Further, the semiconductor device manufacturing method according to anembodiment of the present invention allows for the formation of the ESDprotection element configured as described above in the same processstep as for forming the main body transistor. This eliminates the needfor adding a process step for forming the main body transistor, thusallowing for the manufacture of a semiconductor device having an ESDprotection element whose junction withstand voltage is equal to orgreater than that of the main body transistor.

The semiconductor device according to the embodiments of the presentinvention allows for the formation of an ESD protection element havingthe same withstand voltage as the junction of the main body transistorwithout increasing the number of process steps.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram for describing the configuration of a semiconductordevice according to an embodiment of the present invention;

FIGS. 2A to 2D are diagrams for describing a semiconductor devicemanufacturing method according to the embodiment of the presentinvention;

FIGS. 3A to 3C are diagrams for describing the semiconductor devicemanufacturing method according to the embodiment of the presentinvention;

FIGS. 4A to 4C are diagrams for describing the semiconductor devicemanufacturing method according to the embodiment of the presentinvention;

FIGS. 5A and 5B are diagrams for describing a semiconductor devicemanufacturing method according to the embodiment of the presentinvention;

FIG. 6 is a diagram for describing the configuration of a semiconductordevice according to another embodiment of the present invention; and

FIG. 7 is a diagram for describing the configuration of a semiconductordevice of the past.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The best embodiments for carrying out the present invention will bedescribed below. However, the present invention is not limited to theseembodiments.

The present embodiments will be described in the following order:

1. Embodiment of the semiconductor device2. Manufacturing method of the semiconductor device according to a firstembodiment3. Another embodiment of the semiconductor device

<1. Embodiment of the Semiconductor Device>

A specific embodiment of the semiconductor device according to anembodiment of the present invention will be described below.

FIG. 1 is a schematic configuration diagram of the semiconductor deviceaccording to the present invention, illustrating a main body transistor(Tr) region 10 and ESD (Electrostatic Discharge) protection elementregion 30 in a vertical DMOSFET (Double-diffused Metal OxideSemiconductor Field Effect Transistor).

The semiconductor device according to the present embodiment has, as avertical DMOSFET device structure, a so-called super junction structurein which first conductivity type e.g., n-type drift regions and secondconductivity type e.g., p-type pillar regions are alternately repeated.A semiconductor device having this structure achieves compatibilitybetween element withstand voltage and low Ron.

In both the main body transistor (Tr) region 10 and ESD protectionelement region 30, a drift region 12 are formed on the main surface of adrain region 11. The drain regions 11 each include a first conductivitytype semiconductor region having a high impurity concentration (n⁺type). The drift regions 12 each include a first conductivity type (ntype) semiconductor region.

Second conductivity type (p type) pillar regions 13 are formed in eachof the drift regions 12. The pillar regions 13 are arranged periodicallyin the direction approximately parallel to the main surface of each ofthe drain regions 11. The drift region 12 and pillar regions 13 form aso-called super junction structure. That is, the drift region 12 andpillar regions 13 are adjacent to each other to form p-n junctions.

In the main body Tr region 10, body regions 14 are formed on and incontact with the pillar regions 13. The body regions 14 each include asecond conductivity type (p type) semiconductor region. As with thepillar regions 13, the body regions 14 are adjacent to the firstconductivity type drift region 12 to form p-n junctions.

Similarly, in the ESD protection element region, body regions 34 areformed on and in contact with the pillar regions 13. The body regions 34each include a second conductivity type (p type) semiconductor region.As with the pillar regions 13, the body regions 34 are adjacent to thefirst conductivity type drift region 12 to form p-n junctions.

A gate insulating film 18 is provided on the drift regions 12 and bodyregions 14 and 34.

In the main body Tr region 10, gate electrodes 17 are formed on the gateinsulating film 18 in such a manner as to straddle a part of the bodyregions 14 and a part of the drift region 12.

Further, on the surfaces of the body regions 14, source regions 15 areselectively formed where the end portions of the gate electrodes 17 andthose of the source regions 15 overlap each other. The source regions 55each include a first conductivity type (n type) semiconductor region.Still further, on the surfaces of the body regions 14, potentialextraction regions (backgates) 16 adapted to extract the potentials ofthe body regions 14 are formed, each adjacent to the source region 15.The potential extraction regions 16 each include a second conductivitytype (p type) semiconductor region.

In the vertical DMOSFET according to the present embodiment, channelregions are formed in the body regions 14 where the gate electrodes 17and body regions 14 in the main body Tr region overlap each other. Thatis, the length between the source region 15 and drift region 12 underthe gate electrode 17 is the effective channel length.

In the ESD protection element region 30, gate electrodes 37 are formedin the second conductivity type body regions 34 on the gate insulatingfilm 18. The gate electrodes 37 are formed so that the gate lengththereof is equal to or less than twice the channel length of the mainbody Tr.

Further, in the ESD protection element region 30, drain regions 31 areformed on the surfaces of the body regions 34. The drain regions 31 eachinclude a first conductivity type semiconductor region. Still further,on the surfaces of the body regions 34, first conductivity type sourceregions 35 are formed, each opposed to one of the drain regions 31 withthe gate electrode 37 provided therebetween. Still further, on thesurfaces of the body regions 34, potential extraction regions(backgates) 36 adapted to extract the potentials of the body regions 34are formed, each adjacent to the source region 35. The potentialextraction regions 36 each include a second conductivity typesemiconductor region.

In the DMOSFET of the main body Tr region 10, the gate electrodes 17 areformed on the drift region 12 first, followed by the formation of thesecond conductivity type body regions 14 by ion injection. That is, thesecond conductivity type body regions 14 are formed by ion-injecting asecond conductivity type impurity such as boron (B) into the driftregion 12 using the gate electrodes 17 as masks and thermally diffusingthe impurity. At this time, the body regions 14 are formed to spread asfar as under the gate electrodes 17 as a result of the diffusion of theion-injected impurity.

In the ESD protection element region 30 as in the main body Tr region10, the gate electrodes 37 are formed on the drift region 12 first,followed by the ion injection from above the gate electrodes 37 to formthe second conductivity type body regions 34.

At the stage following the ion injection, the impurity has been injectedinto all areas except immediately under the gates, that is, under thegate electrodes 37. Thermal diffusion spreads the impurity layer as faras under the gate electrodes 37. At this time, a gate length L of thegate electrode 37 is equal to or less than twice a channel length c inthe main body Tr region 10.

The channel length c in the main body Tr region 10 is where the impuritylayer has spread as a result of thermal diffusion following the ioninjection using the gate electrodes 17 as masks. Therefore, as a resultof the thermal diffusion adapted to form the body regions 14 in the mainbody Tr region 10, the ion-injected impurity region laterally diffusesat least to the region of the channel length c.

In the ESD protection element region 30, the impurity which has beenion-injected using the gate electrodes 37 as masks laterally diffuses atleast to the region of the channel length c.

Because of the ion injection around the gate electrode 37, the bodyregion 34 can extend to immediately under the gate electrode 37 if thegate length L of the gate electrode 37 is equal to or less than twicethe channel length c.

This allows for the formation of a GGMOS (Grounded Gate MOS) ESDprotection element having the impurity region of the body region 34extended to under the gate electrode 37.

Further, the semiconductor device according to the present embodimenthas an input terminal 40 to ensure that the gate electrodes 17 of themain body Tr region 10 and the drain regions 31 of the ESD protectionelement region 30 are at the same potential.

When a voltage is applied from the input terminal 40 to the gateelectrodes 17, channel regions are formed in the body regions 14immediately under the gate electrodes 17 between the source regions 15and drift region 12. This causes electrons to move from the sourceregions 15 to the drift region 12. A current flows through the substrateas electrons move to the drift region 12 and then to the drain region11.

In the vertical DMOSFET configuration shown in FIG. 1, the secondconductivity type pillar regions 13 and first conductivity type driftregion 12 have the same impurity concentration. This causes the pillarregions 13 and drift region 12 to be completely depleted when a reversebias is applied between the drain and source with the transistor turnedoff, thus providing a uniform electric field distribution.

The semiconductor device configuration shown in FIG. 1, therefore,provides high withstand voltage even if the impurity concentration ofthe drift region 12 is increased greater than when a super junctionstructure is not used. Further, because the impurity concentration ofthe drift region can be increased, the resistance Ron with thetransistor turned on can be reduced. That is, the semiconductor deviceconfigured as described above achieves compatibility between highelement withstand voltage and low Ron.

Further, in the semiconductor device according to the presentembodiment, the drift regions 12 and pillar regions 13 are formed on thefirst conductivity type semiconductor layers 11. The drift regions 12each include a first conductivity type epitaxial layer. The pillarregions 13 each include a second conductivity type semiconductor region.Each of the drift regions 12 has a width b, and each of the pillarregions 13 has a width a1. The drift region 12 and pillar region 13 arealternately repeated to form a super junction structure.

Still further, the second conductivity type body regions 14 are formedwith a width a2 on the pillar regions 13. DMOSFET channel regions areformed between the gate electrodes 17 and the source regions 15 formedon both ends of each of the gate electrodes 17.

On the other hand, the ESD protection element for DMOSFET is formed inthe same process step as for forming the vertical DMOSFET having a superjunction structure which makes up the main body Tr. The ESD protectionelement for DMOSFET has a super junction structure in which the driftregion 12 and pillar region 13 are alternately repeated. The driftregions 12 each have a width B and include a first conductivity typeepitaxial layer. The second conductivity type pillar regions 13 eachhave a width A1. The body regions 34 are each formed with a width A2 onthe pillar regions 13.

Here, the main body Tr region 10 and ESD protection element region 30are formed so that the widths b and B are the same, widths a1 and A1 arethe same and widths a2 and A2 are the same. Therefore, when a reversebias is applied between the drain and source with the DMOSFET of themain body Tr turned off, the pillar regions 13 and drift region 12 inthe ESD protection element are completely depleted as in the DMOSFET ofthe main body Tr, thus providing the same withstand voltage.

In the semiconductor device according to the present embodiment, aso-called GGMOS electrostatic discharge protection element is formed inthe ESD protection element region 30. This provides the same withstandvoltage as the junction between the source 15 and backgate 16 in theDMOSFET of the main body Tr region. Further, a GGMOS protection elementis formed as an ESD protection element. This provides static dischargeprotection at a voltage equal to or lower than the gate insulationwithstand voltage only when static electricity is applied to the gateelectrodes 37.

Further, the gate electrodes 17 of the main body Tr region 10 and thegate electrodes 37 of the ESD protection element region 30 can be formedin the same process step. Still further, the ion injection and thermaldiffusion for the body regions 14 of the main body Tr region 10 and thebody regions 34 of the ESD protection element region 30 can be conductedin the same process step. Still further, the drain regions 31, sourceregions 35 and backgates 36 of the ESD protection element region 30 andthe source regions 15 and backgates 16 of the main body Tr region 10 canbe formed in the same process step. This allows for the formation of anESD protection element region in a process step required for theformation of the DMOSFET in the main body Tr region.

As a result, the ESD protection element region 30 having an excellentwithstand voltage property can be formed without adding any processstep.

<2. Manufacturing Method of the Semiconductor Device According to aFirst Embodiment>

A detailed description will be given next of an example of manufacturingmethod of the semiconductor device configured as shown in FIG. 1 withreference to the accompanying drawings. It should be noted that likecomponents as those in FIG. 1 are denoted by the same reference numeralsand the detailed description thereof will be omitted.

First, as illustrated in FIG. 2A, the drift regions 12 are formed byepitaxially growing a semiconductor layer on the main surface of thedrain regions 11 while at the same time doping the semiconductor layer,for example, with phosphorus (P). The drain regions 11 each include afirst conductivity type semiconductor base body having a high impurityconcentration (n⁺ type). At this time, the semiconductor layer is formedto suit the heights of the top portions of the pillar regions which willbe formed in the semiconductor layer.

Next, as illustrated in FIG. 2B, trenches T are formed, for example, byRIE (Reactive Ion Etching) where the second conductivity type pillarregions will be formed. Then, as illustrated in FIG. 2C, the trenches Tare filled with a second conductivity type semiconductor to form thepillar regions 13.

Further, the pillar regions 13 are completely embedded in the driftregions 12 as illustrated in FIG. 2D by epitaxially growing the firstconductivity type semiconductor layer in the drift regions.

It should be noted that the drift regions 12 and pillar regions 13 shownin FIG. 2D can be formed by other methods.

For example, as illustrated in FIG. 3A, a first conductivity typesemiconductor layer is epitaxially grown on a first conductivity typesemiconductor base body. Next, a second conductivity type impurity suchas boron (B) is ion-injected into the positions of this epitaxiallygrown layer 20 where the pillar regions will be formed, thus formingimpurity regions 21. Further, as illustrated in FIG. 3B, the processsteps for epitaxially growing a first conductivity type semiconductorlayer and forming the impurity regions 21 in the epitaxially grown layer20 are repeated.

Then, a second conductivity type impurity is thermally diffused, thusforming the pillar regions 13 in the epitaxially grown layer 20 asillustrated in FIG. 3C.

Thus, the drift and pillar regions can be formed by the method describedabove.

Next, as illustrated in FIG. 4A, the gate insulating film 18 is formedon the surface of the epitaxially grown semiconductor layer, followed bythe formation of the gate electrodes 17 and 37 on the gate insulatingfilm 18.

In the ESD protection element region 30, the gate electrodes 37 areformed so that the gate length L thereof is equal to or less than twicethe channel length c in the main body Tr region.

Next, as illustrated in FIG. 4B, a second conductivity type impuritysuch as boron (B) is ion-injected using the gate electrodes 17 and 37 asmasks, thus forming impurity regions 22 and 23. Then, the ion-injectedsecond conductivity type impurity is thermally diffused, thus formingsecond conductivity type body regions as illustrated in FIG. 4C.

In the ESD protection element region 30, the gate electrodes 37 areformed so that the gate length L thereof is equal to or less than twicethe channel length c in the main body Tr region. As a result, theimpurity laterally diffuses as far as under the gate electrodes 37,allowing for the formation of the body regions 34.

Further, the impurity diffuses laterally because of the thermaldiffusion adapted to form the body regions 14 and 34. This causes thediffused impurity to form channel regions under the gate electrodes 17in the main body Tr region.

Next, as illustrated in FIG. 5A, a first conductivity type impurity suchas phosphorus (P) is ion-injected into given positions of the bodyregions 14 and 34 using the gate electrodes 17 and 37 as masks, followedby thermal diffusion. This process step forms not only the sourceregions 15 in the body regions of the main body Tr region and the sourceregions 31 and drain regions 35 in the ESD protection element region.

Further, as illustrated in FIG. 5B, a second conductivity type impuritysuch as boron (B) is ion-injected into the body regions 14 and 34, thusforming the potential extraction regions (backgates) 16 adapted toextract the potentials of the body regions 14 in the main body Tr region10. The backgates 16 each include a second conductivity typesemiconductor region. The potential extraction regions (backgates) 36are also formed which are adapted to extract the potentials of the bodyregions 34 in the ESD protection element region. The backgates 36 eachinclude a second conductivity type semiconductor region.

In the above manufacturing method, the process step for ion-injecting asecond conductivity type impurity to form the body regions 14 and 34 canform the same regions 14 and 34 in a self-aligned manner byion-injecting the impurity using the gate electrodes 17 and 37 as masks.Similarly, the process step for ion-injecting a first conductivity typeimpurity to form the source regions 15 and 31 and drain regions 35 inthe body regions 14 and 34 can form the same regions 15, 31 and 35 in aself-aligned manner by ion-injecting the impurity using the gateelectrodes 17 and 37 as masks. This permits ion injection with highaccuracy where the gate electrodes 17 and 37 are used as masks even ifmask alignment is conducted with low accuracy.

<3. Another Embodiment of the Semiconductor Device>

In the above embodiment, the semiconductor device according to anembodiment of the present invention has been described with reference tothe combination of a vertical DMOSFET and ESD protection element forDMOSFET both having a super junction structure. However, a commonvertical or horizontal DMOSFET may be used rather than a verticalDMOSFET having a super junction structure. FIG. 6 illustrates, as anexample, the configuration of a semiconductor device using a horizontalDMOSFET. It should be noted that, in the description given below, likecomponents as those in FIG. 1 are denoted by the same reference numeralsand the detailed description thereof will be omitted.

In both the main body Tr region 10 and ESD protection element region 30,the drift regions 12 are formed on second conductivity type (p type)semiconductor base bodies 41. The drift regions 12 each include a firstconductivity type (n type) epitaxially grown layer. Further, the gateelectrode 17 is formed above the drift layer 12 via the gate insulatingfilm 18.

In the main body Tr region 10, the body region 14 is formed on thesurface of the drift region 12 which includes an epitaxially grownlayer. Further, a second conductivity type (p type) drain region 42 isformed to be opposed to the body region 14 with a gate electrodeprovided therebetween.

On the surface of the body region 14, the source region 15 isselectively formed where the end portion of the gate electrode 17 andthat of the source region 15 overlap each other. The source region 15includes a first conductivity type semiconductor region. Further, on thesurface of the body region 14, the potential extraction region(backgate) 16 adapted to extract the potential of the body region 14 isformed adjacent to the source region 15. The potential extraction region16 includes a second conductivity type semiconductor region.

Still further, a channel region is formed at the position of each of thebody regions 14 where the gate 17 and body region 14 overlap each otherin the main body Tr region 10.

When a voltage is applied from the input terminal 40 to the gateelectrode 17, a channel region is formed in the body region 14immediately under the gate electrode 17 between the source region 15 anddrift region 12. This causes electrons to move from the source regions15 to the drift region 12. A current flows through the substrate aselectrons move to the drift region 12 and then to the drain region 42.

On the other hand, the ESD protection element region 30 has the sameconfiguration as the semiconductor device shown in FIG. 1. Here, thegate length L of the gate electrodes 37 is also equal to or less thantwice the channel length c in the main body Tr region 10. This allowsfor the formation of a GGMOS ESD protection element having the impurityregion of the body region 34 extended to under the gate electrode 37.

Although, in the above embodiments of the semiconductor device, a bodyregion of a first conductivity type such as p type is formed in a driftregion which includes an epitaxially grown layer of a first conductivitytype such as n type, n and p types may be reversed.

It should be noted that the present invention is not limited to theconfigurations described in the above embodiments but may be modified oraltered in various ways without departing from the spirit and scope ofthe present invention.

1. A semiconductor device comprising: a transistor region; and aprotection element region, wherein the transistor region includes, adrain region which includes a first conductivity type semiconductorlayer; a first region formed over the drain region; a second regionwhich includes a second conductivity type semiconductor region formed inthe first region; a gate insulating layer formed over the surfaces ofthe first region and second region; a gate electrode formed over thegate insulating layer to straddle a part of the surface of the secondregion and a part of the surface of the first region; a source regionwhich includes a first conductivity type semiconductor region; and achannel region formed over a part of the surface of the second region.2. The semiconductor device of claim 1 comprising, in the transistorregion and protection element region, second conductivity type regionswhich are arranged in the direction approximately parallel to thesurface of the drain region.
 3. The semiconductor device of claim 1,wherein the protection element region is to protect an electrostaticdischarge.
 4. The semiconductor device of claim 1, wherein the firstregion is a drift region.
 5. The semiconductor device of claim 1,wherein the first region includes a first conductivity typesemiconductor region.
 6. The semiconductor device of claim 1, whereinthe second region is a body region.
 7. The semiconductor device of claim1, wherein the source region is formed over a part of the surface of thesecond region at the end portion of the gate electrode.
 8. Thesemiconductor device of claim 1, wherein the source region is covered bythe end portion of the gate electrode in the second region.
 9. Thesemiconductor device of claim 1, further comprising a potentialextraction region to extract the potential of the second region whichincludes a second conductivity type impurity diffusion layer formed overthe surface of the second region,
 10. The semiconductor device of claim1, wherein the protection element region includes, the second regionhaving the same configuration as those in the transistor region;
 11. Thesemiconductor device of claim 10, wherein the gate insulating layerformed over the surface of the second region and the gate electrodeformed over the gate insulating layer over a part of the surface of thesecond region;
 12. The semiconductor device of claim 11, furthercomprising a source region and a drain region, the source regionincluding a first conductivity type semiconductor region formed over apart of the surface of the second region at the end portion of the gateelectrode, and the drain region including a first conductivity typesemiconductor region; and
 13. The semiconductor device of claim 12,further comprising a potential extraction region to extract thepotential of the second region, which includes a second conductivitytype semiconductor region formed over a part of the surface of thesecond region.
 14. The semiconductor device of claim 1, wherein a gatelength in the protection element region is equal to or less than twice achannel length in the transistor region.
 15. The semiconductor device ofclaim 1, wherein the first region is a epitaxial region.
 16. Thesemiconductor device of claim 1, wherein the second conductivity typeregion is a ion-implanted region.
 17. The semiconductor device of claim1, wherein the first conductivity type region is a ion-implanted region.